王廷江. 倍压整流电路的广义忆阻特性[J]. 云南大学学报(自然科学版), 2020, 42(5): 863-869. doi: 10.7540/j.ynu.20190652
引用本文: 王廷江. 倍压整流电路的广义忆阻特性[J]. 云南大学学报(自然科学版), 2020, 42(5): 863-869. doi: 10.7540/j.ynu.20190652
WANG Ting-jiang. Generalized memristor characteristics of voltage doubler rectifier circuit[J]. Journal of Yunnan University: Natural Sciences Edition, 2020, 42(5): 863-869. DOI: 10.7540/j.ynu.20190652
Citation: WANG Ting-jiang. Generalized memristor characteristics of voltage doubler rectifier circuit[J]. Journal of Yunnan University: Natural Sciences Edition, 2020, 42(5): 863-869. DOI: 10.7540/j.ynu.20190652

倍压整流电路的广义忆阻特性

Generalized memristor characteristics of voltage doubler rectifier circuit

  • 摘要: 研究旨在证明二倍压整流电路具有广义忆阻特性,为挖掘倍压整流电路的新功能及新应用提供理论依据. 首先,根据电路理论求得二倍压整流电路在电压源激励下输入端口伏安关系式以及电路中电容电压的状态方程;其次,由理论分析所得关系式,选取电路元件参数,施加正弦激励电压,由Matlab软件对端口伏安关系进行数值仿真分析;最后,通过Multisim软件进行虚拟实验以及物理实验进行验证. 结果表明理论分析符合广义忆阻器数学定义,数值仿真、虚拟实验及硬件实验3者结果基本吻合,验证了输入端口呈现出忆阻器的3个本质特征,从而证实了二倍压整流电路在取适当电路元件参数时具有广义忆阻特性.

     

    Abstract: The purpose is to prove the generalized memristor characteristics of the voltage doubler rectifier circuit and to provide a theoretical basis for exploring the new functions and new applications of the voltage doubler rectifier. Firstly, circuit theory is used to obtain the voltage-current relation of the input port excited by the voltage source, and the equations of the capacitor voltage in the circuit. Secondly, the voltage-current relationship is derived from Matlab simulations under the parameters of circuit components selected and the sine excitation voltage input, based on the theoretical analysis. Finally, verification is conducted via Multisim software and physical experiment. It is indicated that the theoretical analysis meets the mathematical definition of generalized memristor. The results of numerical simulation, virtual experiment and hardware experiment are basically in good agreement. Three essential characteristics of memristors are demonstrated at the input port, which proves that the voltage doubler rectifier has generalized memristor characteristics when taking proper circuit component parameters.

     

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