Abstract: The purpose is to prove the generalized memristor characteristics of the voltage doubler rectifier circuit and to provide a theoretical basis for exploring the new functions and new applications of the voltage doubler rectifier. Firstly, circuit theory is used to obtain the voltage-current relation of the input port excited by the voltage source, and the equations of the capacitor voltage in the circuit. Secondly, the voltage-current relationship is derived from Matlab simulations under the parameters of circuit components selected and the sine excitation voltage input, based on the theoretical analysis. Finally, verification is conducted via Multisim software and physical experiment. It is indicated that the theoretical analysis meets the mathematical definition of generalized memristor. The results of numerical simulation, virtual experiment and hardware experiment are basically in good agreement. Three essential characteristics of memristors are demonstrated at the input port, which proves that the voltage doubler rectifier has generalized memristor characteristics when taking proper circuit component parameters.