Abstract:
In this research, chemical vapor deposition (CVD) method was used to cultivate MoS
2 material on a silicon substrate with a 300 nm oxide layer. Monolayer MoS
2 materials were characterized by optical microscope (OM), scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectroscopy and photoluminescence (PL) spectroscopy. It shows that the single-layer MoS
2 flakes with high-quality has been successfully fabricate. Then, single-layer MoS
2 field-effect transistor (FET) was prepared. Experimental results of device tests showed that the on-off ratio of the device was about 1.0×10
7. Finally, the electrical transport characteristics of the devices at different temperatures were tested. The results show that the electrical conduction mechanism at low temperature (
T<100 K) can be explained by Mott’s variable-range hopping (VRH) model. When the temperature is higher than 100 K, electrical transport properties could be determined by his nearest neighbor hopping (NNH) model. This work will be helpful to an in-depth understanding of the electrical transport characteristics of single-layer MoS
2 and the design and performance improvement of the optoelectronic devices.