Abstract: Spintronic materials show great application potential in building a new generation of information processing technology characterized by low power consumption, ultra-high speed, large capacity and ultra wide band, because they can control the two degrees of freedom of electron spin and charge at the same time. However, the traditional diluted magnetic semiconductors and perovskite manganese oxides formed by doping transition metals and rare earth ions often hinder the commercial application of spintronics due to low Curie temperature, low spin magnetic moment and low spin polarization caused by structural defects. In recent years, pure spin current can be generated by using polarized light to excite noble metal/semiconductor heterojunction formed by depositing noble metal films on high-purity semiconductors. Based on the inverse spin Hall effect (ISHE), this non-contact and non-destructive spin polarization excitation method, which can operate at room temperature, can theoretically obtain spin polarizability higher than 50%, which has attracted widespread attention. This paper mainly introduces the formation mechanism and testing method of the photo induced spin current, and the regulation mechanism of the circular polarization degree, light intensity, incident angle and other parameters of the incident light on the photo induced spin injection efficiency. The contribution of impurity mediated and phonon mediated to photoinduced spin transport is introduced. Finally, a feasible scheme to improve the polarization of photoinduced spintronics is proposed. This paper can provide an effective reference for revealing the core scientific problems of spin dynamics related to the generation, injection and transport of spin carriers and developing high-performance spintronic devices.