Abstract: The main purpose of grinding is to remove this damaged layer and partially repair the surface morphology of the cut wafer, making it easier for subsequent polishing processes and reducing the amount of loss during mechanical polishing, thus achieving cost savings. The purpose of the etching process is mainly to remove part of the damage caused by grinding and expose scratches generated during the grinding process. This study systematically investigates the impact of grinding process parameters (including lower plate rotation speed, grinding pressure, grinding fluid ratio, grinding powder particle size, etc.) on the roughness, grinding efficiency, and depth of the damaged layer of double-sided grinding of indium phosphide wafers, and optimal process of double-sided grinding of indium phosphide wafers was obtained: the speed of the lower set plate was optimized to be 4−8 r/min, the pressure was optimized to be 150−180 N, and the particle size of the grinding powder was 4 μm< D_50%< 12 μm. It also explores the effects of different etching times and etching solution temperatures on the surface morphology of the wafers, and identifies an optimal etching process. This work provides a reference for the efficient batch grinding treatment of indium phosphide cutting wafers.